Experiments on MEMS Integration in 0.25 μm CMOS Process
نویسندگان
چکیده
منابع مشابه
High performance MEMS 0.18 μm RF-CMOS transformers
This work presents a micromachined RF-CMOS transformer fabricated in a commercially available 0.18μm CMOS process. Maskless micromachining post-processing is used to remove oxide and substrate material from around the transformer, reducing parasitic effects and improving the performance of the transformer. Index Terms — baluns, CMOS integrated circuits; MEMS, maskless micromachining, Q enhancem...
متن کاملIntegration of solid-state nanopores in a 0.5 μm CMOS foundry process.
High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA-base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial comp...
متن کاملFirst High Volume Via Process for Packaging and Integration of MEMS / CMOS
Silex Microsystems, a pure play MEMS foundry, offers a high density through silicon via technology that enables MEMS designs with significantly reduced form factor. The Through Silicon Via (TSV) process developed by Silex offers sub 50 μm pitch for through wafer connections in up to 600 μm thick substrates. Silex via process enables “all silicon” MEMS designs and true "Wafer Level Packaging" fe...
متن کاملCarbon Nanotube Integration with a CMOS Process
This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties ...
متن کاملChallenges in CMOS-MEMS Extraction
CMOS micromachining processes are being increasingly used to fabricate integrated MEMS devices. Verification of such designs requires extraction from layout to mixed domain circuits and MEMS schematics for lumped parameter simulation. The higher etch hole density and multilayer interconnect in CMOS-MEMS designs results in a larger and more complex problem than in polysilicon MEMS. In addition, ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Sensors
سال: 2018
ISSN: 1424-8220
DOI: 10.3390/s18072111